Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface
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United States of America Patent
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Apr 27, 1999
Grant Date -
N/A
app pub date -
Aug 27, 1996
filing date -
Oct 9, 1995
priority date (Note) -
Expired
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Abstract
A light emitting diode for generating preferably green light with improved luminous efficiency. A number of epitaxial layers suitable for the light emission is arranged on a doped semiconductor substrate wafer of GaP. The surface of the epitaxial layers is completely frosted. The light emission from the interior is considerably improved by the frosting. A contact layer structure is placed on the frosted surface for contacting the light emitting diode. The contact layer consists of several partial layers and covers at least a part the frosted surface. There is also a contact layer at the rear of the light emitting diode.
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