Infrared photodetector with doping superlattice structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 20, 1999
Grant Date -
N/A
app pub date -
Jul 11, 1997
filing date -
Dec 12, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
This invention provides infrared sensing photodetector and a method therefor which provides a structure for effectively absorbing a light incident in a normal direction on a substrate, and a method compatible with existing processes for making integrated circuitry. An infrared sensing photodetector includes a compound semiconductor substrate of a first conductivity type, superlattice areas having implanted impurity ions of a second conductivity type opposite to the compound semiconductor substrate, each being spaced a predetermined distance each other in a selected region of the semiconductor substrate, a first collector area and a first emitter area which are formed in both end portions positioned perpendicular relative to the doped superlattice areas, a first collector electrode and a first emitter electrode formed on the first collector area and the first emitter area, respectively, a second collector area and a second emitter area which are spaced a predetermined distance in a horizontal direction on the doped superlattice area, and a second collector electrode and a second emitter electrode formed on the second collector area and the second emitter area, respectively.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully