Method for forming stacked polysilicon
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United States of America Patent
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Apr 20, 1999
Grant Date -
N/A
app pub date -
Jul 30, 1997
filing date -
Jul 30, 1997
priority date (Note) -
Expired
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Abstract
An improved and new method for forming stacked polysilicon contacts for use in multilevel conducting interconnection wiring in semiconductor integrated circuits has been developed. The polysilicon contacts are self-aligned between wiring levels and the fabrication process results in a substantially planar top insulating layer surface.
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