Application of fast etching glass for FED manufacturing
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 13, 1999
Grant Date -
N/A
app pub date -
Mar 3, 1997
filing date -
Mar 3, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The microtip housing cavity in a cold cathode display was formed by selecting for the dielectric layer surrounding it a material whose etch rate (for the same etchant) was 3 to 20 times faster than the etch rate of the gate layer. Specifically, a gaseous etchant that included CHF.sub.3, CH.sub.4, CO, or CO and C.sub.4 F.sub.8 was used to form the cavity in a layer consisting of silicon oxide containing between about 3 and 10 weight % boron and between about 3 and 10 weight % phosphorus, deposited by chemical vapor deposition at pressures somewhat less than atmospheric (commonly referred to as SABPSG or sub-atmospheric boro-phosphosilicate glass). The gate layer consisted of phosphorus-doped polysilicon. Using this combination, once the gate opening had been etched, etching of the cavity proceeded very rapidly with little increase in the width of the gate opening. Thus the cavity was formed in a single mask, single etchant process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully