Process for producing a thin film of a flouride
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United States of America Patent
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Apr 6, 1999
Grant Date -
N/A
app pub date -
Jun 18, 1997
filing date -
Jun 21, 1996
priority date (Note) -
Expired
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Abstract
A process for producing a thin film of a fluoride comprising reacting a gaseous fluorinating agent and gas of a volatile organometallic compound in a gas phase in a reactor, wherein a plasma of the gaseous fluorinating agent obtained by activating the gaseous fluorinating agent by microwave under a condition of electron cyclotron resonance is used as a fluorine source, and the fluoride is deposited on a substrate by reacting the plasma of the gaseous fluorinating agent with the gas of a volatile organometallic compound at outside of an area of generation of the plasma. A thin film of a fluoride which contains very little impurities such as carbon, oxygen, and organic substances, and is highly pure, transparent, and consolidated is produced.
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