Method for manufacturing semiconductor device and reticle for wiring
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United States of America Patent
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Mar 30, 1999
Grant Date -
N/A
app pub date -
Jul 28, 1997
filing date -
Jul 30, 1996
priority date (Note) -
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Abstract
A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.
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