Process for making a cesiated diamond film field emitter and field emitter formed therefrom
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 30, 1999
Grant Date -
N/A
app pub date -
Mar 27, 1997
filing date -
Mar 27, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully