Substrate and heat sink for a semiconductor and method of manufacturing the same

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United States of America Patent

PATENT NO 5886269
SERIAL NO

08605542

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Abstract

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A substrate serving as a heat sink for a semiconductor efficiently radiates heat from a semiconductor element mounted thereon. The substrate consists of a composite alloy metal which consists of a sintered body of a metal powder having a high melting point such as W and Mo impregnated with a filling metal such as Cu and Ag, wherein the sintered body of a metal powder having a high melting point has a grain size composition of a combination of a plurality of powder groups having statistically different average grain sizes from group to group, and the powder of each group is dispersed uniformly.

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Patent Owner(s)

  • NIPPON TUNGSTEN CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gotoh, Shinji Fukuoka, JP 2 27
Kai, Yasunao Fukuoka, JP 2 9
Mishima, Akira Fukuoka, JP 40 865
Yamasaki, Chiaki Fukuoka, JP 1 6

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