Process for forming a-axis-on-c-axis double-layer oxide superconductor films
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United States of America Patent
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Mar 23, 1999
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N/A
app pub date -
Jun 23, 1997
filing date -
Mar 25, 1994
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Expired
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Abstract
A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
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