Multi-step process to incorporate grain growth inhibitors in WC-Co composite
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United States of America Patent
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Mar 23, 1999
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N/A
app pub date -
Oct 2, 1996
filing date -
Oct 2, 1996
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Abstract
Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900.degree. C. to 1000.degree. C.
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