High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
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United States of America Patent
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Mar 2, 1999
Grant Date -
N/A
app pub date -
Jul 10, 1996
filing date -
Jul 10, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
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