Method of manufacturing a group II-VI compound semiconductor
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United States of America Patent
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Feb 9, 1999
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N/A
app pub date -
Jun 16, 1997
filing date -
Jun 22, 1993
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Expired
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Abstract
The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
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