Method of treating a semi-conductor wafer

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United States of America Patent

PATENT NO 5858880
SERIAL NO

08578660

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Abstract

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In a method of treating a semi-conductor wafer a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dobson, Christopher David Bristol, GB 13 335
Kiermasz, Adrian Weston-super-Mare, GB 17 248

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