Process for growing a film epitaxially upon an oxide surface and structures formed with the process
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United States of America Patent
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-
Jan 5, 1999
Issued Date -
N/A
app pub date -
Aug 21, 1995
filing date -
Jul 30, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
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- 2 Citation Count
- B32B Class
- 2.04 % this patent is cited more than
- 26 Age