Semiconductor device having a bump structure and test electrode
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United States of America Patent
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Dec 29, 1998
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N/A
app pub date -
Jul 12, 1996
filing date -
Jul 14, 1995
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Abstract
A bump structure of a semiconductor device includes at least one pad electrode formed on a semiconductor substrate; a test electrode formed on the semiconductor substrate, the pad electrode and the test electrode being located separately from one another; a passivation layer formed on an area of the semiconductor substrate other than that covered by the pad electrode and the test electrode; a metal layer integrally formed on a portion of the pad electrode and on a portion of the test electrode adjacent to the pad electrode; and a bump formed on an overall surface of the metal layer.
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