Method for thermal chemical vapor deposition
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United States of America Patent
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Dec 22, 1998
Issued Date -
N/A
app pub date -
Sep 26, 1994
filing date -
Jun 28, 1986
priority date (Note) -
Expired
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Abstract
A method and an apparatus for a CVD comprising feeding a first gas flow, including a reactive gas, in a laminar flowing state and in a sheet state parallel to the surface of a substrate and feeding a second gas flow, including a non-reactive gas, in a direction perpendicular to that of said first gas flow, externally controlling the flow rates of the first and second gases so as to retain the laminar flowing state of said first gas flow and concentrate said first gas flow in the vicinity of said substrate and externally controlling the flow rate of said second gas flow to provide control and uniformity in the thickness of the layer to be formed.
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