Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories
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United States of America Patent
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Dec 15, 1998
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N/A
app pub date -
Mar 13, 1992
filing date -
Mar 13, 1992
priority date (Note) -
Expired
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Abstract
Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380.degree. C. to about 650.degree. C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.
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