Method for multi-zone high-density inductively-coupled plasma generation

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United States of America Patent

PATENT NO 5846883
SERIAL NO

08678065

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Abstract

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A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually. Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.

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Patent Owner(s)

Patent OwnerAddress
CVC PRODUCTS INC525 LEE ROAD ROCHESTER NY 14603

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moslehi, Mehrdad M Los Altos, CA 307 13906

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