Importance

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Abstract

A high withstand-voltage lateral MOSFET with a trench includes a first conductive type semiconductor layer; a second conductive type source region; a second conductive type drain drift region, the second conductive type source region and the second conductive type drain drift region being formed in a portion of a surface layer of the first conductive type semiconductor layer at a distance from each other; a trench which formed in a surface layer of the second conductive type drain drift region from the surface side thereof; a second conductive type drain region formed in the surface layer of the first conductive type semiconductor layer on the side opposite to the second conductive type source region with respect to the trench and partially overlaps with the second conductive type drain drift region; a gate electrode provided on the surface of a surface exposed portion of the first conductive type semiconductor layer through a gate oxide film; a source electrode provided on the surface of the second conductive type source region; and a drain electrode provided on the surface of the second conductive type drain region.

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First Claim