Circuit arrangement including photoelectric transducers for supplying a high voltage driving signal to an insulated gate bipolar transistor
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United States of America Patent
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Dec 1, 1998
Grant Date -
N/A
app pub date -
Mar 4, 1997
filing date -
Feb 20, 1997
priority date (Note) -
Expired
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Abstract
An insulated gate bipolar transistor (IGBT) is supplied with high voltage electric power by a power supply circuit that includes a plurality of photoelectric transducers arranged to output a high voltage, low current driving signal, and an illumination component optically coupled with the photoelectric transducers and supplied with low voltage electric power, thus allowing the insulated gate bipolar transistor to be used in low voltage applications that would otherwise result in a sudden increase in switch loss and burnout of the transistor.
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