Parallel scan type ion implanter
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United States of America Patent
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Nov 17, 1998
Issued Date -
N/A
app pub date -
Mar 13, 1996
filing date -
Nov 15, 1994
priority date (Note) -
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Abstract
A parallel scan type ion implanter comprising multipole electrostatic deflectors and designed to produce an even and uniform dose distribution on the entire area of the substrate by maintaining the moving speed of the ion beam spot constant on the substrate is characterized in that it holds the rate of raising or lowering the deflection voltage stepwise along the vertical direction (Y-direction) constant and the manner of varying the rate of changing the deflection voltage along the horizontal direction (X-direction) with time as the function of the location of the moving beam spot on the substrate determined by the dimensional parameters of the multipole electrostatic deflectors assuming that the rate is normalized by the rate of changing the deflecting voltage when the beam spot passes the center of the substrate.
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