Method of forming a cadmium telluride/silicon structure
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United States of America Patent
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Nov 17, 1998
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N/A
app pub date -
Sep 19, 1996
filing date -
Sep 19, 1996
priority date (Note) -
Expired
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Abstract
In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.
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