Ceramic substrate and producing process thereof, and a suction carrier for wafers using a ceramic wafer-chucking substrate
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United States of America Patent
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Nov 10, 1998
Grant Date -
N/A
app pub date -
Nov 28, 1994
filing date -
May 26, 1992
priority date (Note) -
Expired
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Abstract
A ceramic substrate for a hard disc, a thin film chip capacitor, and hybrid ICs, and a suction carrier for a substrate is constituted by using a titanium oxide or aluminum oxide substrate having an extremely small number of pores having diameters of 3 .mu.m or more on the substrate surface. The substrate is produced by baking highly purified titanium oxide fine powder or highly purified aluminum oxide fine powder in the air, an inert atmosphere or a reducing atmosphere (at 1,100.degree. C. to 1,300.degree. C. for the former and at 1,200.degree. to 1,400.degree. C. for the latter) and HIP treating the baked material.
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