In situ method for metalizing a semiconductor catalyst

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United States of America Patent

PATENT NO 5834069
SERIAL NO

08640166

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Abstract

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A semiconductor catalyst is metalized in situ on a reaction support surface by illuminating at least a portion of the catalyst in the presence of a suitable source of metal to selectively deposit the metal on the illuminated portions. The source of metal can be applied to the reaction support surface either with the catalyst or separately, but is not attached to the catalyst until the structure is illuminated. This causes the metal to be deposited where the catalyst will be illuminated during use and therefore where photopromoted catalytic degradation can occur.

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Patent Owner(s)

Patent OwnerAddress
ZENTOX CORPORATION30 WASHINGTON STREET SUITE 300 WELLESLEY HILLS MA 02481

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Berman, Elliot Quincy, MA 11 368
Grayfer, Anatoly Newton, MA 18 558

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