Direct multilevel thin-film transistors production method
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United States of America Patent
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Nov 3, 1998
Issued Date -
N/A
app pub date -
Feb 22, 1996
filing date -
Mar 16, 1993
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Abstract
The present invention can be used to make integrated circuits on the same substrate as the active matrix owing to the possibility that it offers of connecting transistor gates to sources or drains of the same or other transistors, and thus be used in a 'integrated drivers' technology. It is also possible to make different types of transistors and capacitances using this method, without adding any additional mask levels.
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