Selective patterning of metallization on a dielectric substrate
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United States of America Patent
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Nov 3, 1998
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N/A
app pub date -
Dec 4, 1992
filing date -
May 28, 1991
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Abstract
A method of selectively fabricating metallization on a dielectric substrate is disclosed. A seed layer is sputtered on a polymer dielectric, a patterned photoresist mask is disposed over the seed layer, exposed portions of the seed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched seed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.
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