Deflection based daughter ion selector
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United States of America Patent
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Oct 13, 1998
Grant Date -
N/A
app pub date -
Nov 22, 1995
filing date -
Nov 22, 1995
priority date (Note) -
Expired
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Abstract
A method and apparatus for analyzing ions by determining times of flight including using a deflectron based daughter ion selector for selecting daughter ions. Parent ions generated in an ion source may fragment to form daughter ions. Daughter ions may further fragment to form grand daughter ions. By selecting a specific type of daughter ion from ions formed in the ion source, one may obtain a grand daughter ion spectrum. According to the present invention, a deflectron based daughter ion selector, in the form of two deflectron and a set of selection plates, is used as a daughter ion selector.
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