Method of manufacturing aluminum nitride

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United States of America Patent

PATENT NO 5817274
SERIAL NO

08923458

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Abstract

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Disclosed is a method of manufacturing aluminum nitride, which comprises the steps of preparing a mixed gas consisting essentially of an ammonia gas and at least 0.5% by volume of a hydrocarbon gas, calcining .gamma.-Al.sub.2 O.sub.3 or a precursor thereof at 300.degree. to 1,100.degree. C. so as to prepare the .gamma.-Al.sub.2 O.sub.3 having a moisture content of 1 weight % or less; heating the calcined .gamma.-Al.sub.2 O.sub.3 in the mixed gas at a temperature of 1,200.degree. to 1,700.degree. C., thereby preparing porous aluminum nitride having a specific surface area of 10 m.sup.2 /g or more; and heat-treating the porous aluminum nitride in an atmosphere of an ammonia gas, or a mixed gas of an ammonia gas and an inert gas, at 1600.degree. to 2000.degree. C., so as to make contents of both carbon and oxygen contained in the aluminum nitride 1 weight % or less.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA CERAMICS CO LTDTOKYO 141-0032
TOSHIBA MONOFRAX CO LTD4-4 HISAMATSU-CHO NIHONBASHI CHUO-KU ITOSHIGE BLDG TOKYO 103

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Masahiro Hadano, JP 47 1323
Fujii, Mikiya Narita, JP 12 92
Kotaka, Hiroaki Hadano, JP 3 85
Matsuo, Shuitsu Atsugi, JP 10 207
Misu, Yasuo Narita, JP 9 34
Terada, Hiroyuki Abiko, JP 13 187
Yamaoka, Hidenori Odawara, JP 6 145

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