High aspect ratio metal microstructures and method for preparing the same

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United States of America Patent

PATENT NO 5814414
SERIAL NO

08601825

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Abstract

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High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

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Patent Owner(s)

Patent OwnerAddress
LEIDOS INC11951 FREEDOM DRIVE RESTON VA 20190

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calvert, Jeffrey M Alexandria, VA 41 1664
Georger, Jr Jacque H Marlboro, MA 12 1006
Hickman, James J McLean, VA 21 299
Peckerar, Martin C Silver Spring, MD 24 790
Rebbert, Milton L Elkridge, MD 3 99

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