Method of measuring gas component concentrations of special material gases for semiconductor, a semiconductor equipment, and an apparatus for supplying special material gases for semiconductor
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United States of America Patent
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Sep 22, 1998
Grant Date -
N/A
app pub date -
Nov 16, 1995
filing date -
Nov 21, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of measuring gas component Concentrations of special material gases for semiconductor, and a semiconductor equipment are provided. The method and apparatus can be incorporated in a gas pipe line system in an inline manner, and measure the component and concentration of a gas flowing through a gas pipe line or a gas with which the gas pipe line system is filled, thereby eliminating any erroneous connection. In the method of measuring gas component concentrations of special material gases for semiconductor, as means for attaining the objects, an infrared gas detector is disposed in a gas pipe line between a gas cylinder containing a special material gas for semiconductor and a semiconductor producing section, so that the gas component and concentration are measured in an inline manner. An apparatus for supplying special material gases for semiconductor is also provided. In the apparatus, a monitor for monitoring a gas component, a concentration, a flow rate, and the like is incorporated in a gas pipe line system from a gas cylinder storing room to a semiconductor equipment, so that any accident such-as erroneous connection, erroneous piping, or erroneous exchange is prevented from occurring. As means for attaining the object, a massflow controller is disposed in each of pipe lines connected to a plurality of gas cylinders containing special material gases for semiconductor, and an infrared gas sensor functioning as an inline gas monitor is disposed in a pipe line between a junction point of the pipe lines and the semiconductor equipment. The massflow controllers and the infrared gas detector are connected to a control apparatus for the apparatus for supplying gases for semiconductor, and the respective output signals are checked. The supply of the gases is controlled in accordance with the agreement or disagreement of the signals.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
MITSUBISHI CORPORATION (ONE THIRD INTEREST) | 6-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO-TO 100-8 | |
HORIBA CO LTD (ONE-THIRD INTEREST) | 2 MIYANOHIGASHI-CHO KISSHOIN MINAMI-KU KYOTO-CITY 601 | |
STEC INC (ONE-THIRD INTEREST) | 2 MIYANOHIGASHI-CHO KISSHOIN MINAMI-KU KYOTO-CITY 601 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Akiyama, Shigeyuki | Otsu, JP | 18 | 160 |
Harada, Hiroyuki | Tokyo-To, JP | 188 | 1912 |
Shimizu, Tetuo | Kyoto, JP | 2 | 16 |
Uno, Toshihiko | Kyoto, JP | 15 | 331 |
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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