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Abstract

A silicon wafer measuring method includes: (a) a first step of measuring a light transmission characteristic (I.sub.OBS) of the pulled silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the pulled silicon wafer, (b) a second step of measuring a light transmission characteristic (I.sub.O) of a floating zone silicon wafer functioning as a reference silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the floating zone silicon wafer, and (c) a third step of calculating a substitutional carbon concentration ?C.sub.SC ! on the basis of the light transmission characteristic (I.sub.OBS) of the pulled silicon wafer measured during the first step and the light transmission characteristic (I.sub.O) of the floating zone silicon wafer measured during the second step, (d) a fourth step of comparing the substitutional carbon concentration ?C.sub.SC ! of the pulled silicon wafer measured during the third step with a reference value, and (e) a fifth step of removing a pulled silicon wafer if its substitutional carbon concentration ?C.sub.SC ! outside of a range of values about the reference value so as to be defective in view of the results compared during the fourth step.

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First Claim