Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors
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United States of America Patent
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Sep 8, 1998
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app pub date -
Dec 31, 1996
filing date -
Jun 5, 1995
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Abstract
A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.
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