Room temperature diode laser emitting in the 2-5 micrometer wavelength range
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United States of America Patent
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Sep 1, 1998
Issued Date -
N/A
app pub date -
May 13, 1997
filing date -
Oct 19, 1995
priority date (Note) -
Expired
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Abstract
A semiconductor laser diode which emits radiation in the 2-5 micrometer wavelength range and operates at room temperature. The laser diode includes an active layer of an In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y alloy and a separate cladding layer on each side of the active layer. One of the cladding layers is of n-type conductivity and the other cladding layer is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.
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