Temperature sensor and method
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United States of America Patent
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Aug 18, 1998
Issued Date -
N/A
app pub date -
Jan 2, 1997
filing date -
Aug 5, 1994
priority date (Note) -
Expired
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Abstract
A temperature sensor using doped polysilicon resistors in a bridge configuration, an amplifier, and a doped polysilicon feedback resistor between the input and the output of the amplifier. The polysilicon resistors are doped with selected concentrations of impurities such as boron, phosphorus, arsenic or antimony. The resistors are doped to establish predetermined temperature coefficients so that the resistors exhibit a predetermined temperature dependence. This temperature dependence is utilized to create a temperature sensor that is stable, accurate, and rugged and that has a generally linear output to temperature response.
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