Method for producing N-type semiconducting diamond

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United States of America Patent

PATENT NO 5792256
SERIAL NO

08719126

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Abstract

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A method of making n-type semiconducting diamond is disclosed, which is doped with boron-10 at the time of diamond formation and bombarded with neutrons for in-situ conversion of boron-10 to lithium-7, while filtering the neutrons from high energy components during irradiation.

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Patent Owner(s)

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MICROPOWER GLOBAL LIMITEDGENEVA PLACE WATERFRONT DRIVE PO BOX 3175 ROAD TOWN TORTOLA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Karumidze, G S Paliashvili, GE 2 21
Kucherov, R Ya Podlsk, RU 2 21
Kucherov, Yan R Salt Lake City, UT 19 515
Shavelashvili, Shota Shalvovich Vazha Pshavela, GE 2 21

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