Method of making chalogenide memory device
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United States of America Patent
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Aug 4, 1998
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N/A
app pub date -
Jul 22, 1996
filing date -
Jul 22, 1996
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Abstract
A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms.
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