Method for the high-linearity copying of voltage
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United States of America Patent
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Jul 7, 1998
Grant Date -
N/A
app pub date -
Feb 26, 1996
filing date -
Mar 7, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A device for copying a voltage (Ve) comprises a pair of series-connected MOS transistors, their sources forming a common point. The voltage (Ve) to be copied is applied between the gate of the first MOS transistor of the pair and a reference. Means are provided to inject a flux of electrons at a common point. A storage capacitor has a first terminal connected to the drain of the second MOS transistor and a second terminal designed to be biased. Means dictate a potential at the drain of the second MOS transistor and then let it vary so that the flux of electrons is stored in the storage capacitor while at the same time decreasing in the second MOS transistor to the benefit of the first one. The copied voltage Vs is available, after stabilization, between the first terminal of the storage capacitor and the reference. Application in particular to circuits for the reading of charges generated in a photosensitive matrix or photosensitive linear array.
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