Method for fabricating semiconductor laser
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United States of America Patent
Stats
-
Jul 7, 1998
Issued Date -
N/A
app pub date -
May 7, 1997
filing date -
Apr 28, 1994
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.
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