Shorted anode lateral insulated gate bipolar transistor
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United States of America Patent
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Jun 30, 1998
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N/A
app pub date -
Jul 15, 1996
filing date -
Mar 20, 1996
priority date (Note) -
Expired
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Abstract
A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.
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