Thin film transistor with light antireflection layer
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United States of America Patent
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Jun 30, 1998
Issued Date -
N/A
app pub date -
Dec 27, 1996
filing date -
Nov 1, 1995
priority date (Note) -
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Abstract
A self-aligned polysilicon thin film transistor, and a method for manufacturing it, is described. An insulating substrate is provided. A gate electrode is formed on the insulating substrate. A protective light-absorbing layer is formed over the gate electrode and over the insulating substrate. The protective light-absorbing layer is patterned. A gate dielectric layer is formed over the protective light-absorbing layer and over the insulating substrate. A layer of amorphous silicon is formed over the gate dielectric layer. A photoresist mask is formed over the layer of amorphous silicon, aligned with the protective light-absorbing layer. The amorphous silicon layer is implanted with a conductivity-imparting dopant in source/drain regions not protected by the photoresist mask. The photoresist mask is removed. The amorphous silicon layer is laser-annealed, whereby doped polysilicon is formed in the source/drain regions, and undoped polysilicon is formed in areas between the source/drain regions. Source and drain electrodes of electrically conductive material are formed in contact with the source/drain regions.
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