Method of using a hot pressed silicon carbide dummy wafer
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United States of America Patent
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Jun 23, 1998
Grant Date -
N/A
app pub date -
Mar 3, 1997
filing date -
Mar 3, 1997
priority date (Note) -
Expired
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Abstract
This invention relates to hot pressed silicon carbide dummy wafers having low iron impurity levels, and a method of using hot pressed silicon carbide dummy wafers in silicon wafer processing applications.
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