Silicon carbide gemstones
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United States of America Patent
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Jun 9, 1998
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N/A
app pub date -
Aug 31, 1995
filing date -
Aug 31, 1995
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Abstract
Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.
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