Metal, passivating layer, semiconductor, field-effect transistor
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United States of America Patent
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Jun 2, 1998
Issued Date -
N/A
app pub date -
Mar 19, 1997
filing date -
Jan 6, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
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