Power thyristor with MOS gated turn-off and MOS-assised turn-on
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United States of America Patent
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May 26, 1998
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N/A
app pub date -
Feb 1, 1995
filing date -
Feb 1, 1995
priority date (Note) -
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Abstract
The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell and to the turn-on gate integrated into the cell. When this voltage is so applied, a channel underlying the FET gate element becomes conductive, which allows the integrated turn-on gate to provide drive to the upper base-upper emitter junction of the thyristor cell thereby turning the thyristor cell on.
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