Method to determine the extent of oxygen precipitate in silicon
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United States of America Patent
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May 26, 1998
Grant Date -
N/A
app pub date -
Oct 22, 1996
filing date -
Apr 22, 1994
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Expired
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Abstract
The concentration of oxygen clusters in silicon is determined with a spectrometer, for the infrared interval, by obtaining the absorption coefficients for one or more of the wave numbers 728.+-.1, 734.+-.1, 975.+-.1, 988.+-.1, 1000.+-.1, 1006.+-.1 and 1012.+-.1.sup.cm-1, using the standard method that is used to determine oxygen atoms in interstitial position and carbon atoms in substitutional position when the measurement is carried out at the wave number 1106 and 605 cm.sup.-1. The absorption measurements are taken at room temperature and are standardized with respect to the thickness of the sample. The measurements are multiplied with a known calibration constant, whereupon the respective absorption coefficient for the different measured wave numbers are a measure of the concentration of different configurations of the oxygen clusters.
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