Epitaxial wafer of gallium arsenide phosphide

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United States of America Patent

PATENT NO 5751026
SERIAL NO

08801295

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In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio. The nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio has a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI KASEI CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imai, Megumi Ushiku, JP 9 43
Sato, Tadashige Ushiku, JP 8 34
Takahashi, Tsuneteru Ushiku, JP 1 4

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  • 4 Citation Count
  • H01L Class
  • 1.19 % this patent is cited more than
  • 27 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges13437278142825134234651501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0255075100125150175200225250275300325350375400425450475

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