Method of fabricating a semiconductor device
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United States of America Patent
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May 12, 1998
Issued Date -
N/A
app pub date -
Oct 26, 1994
filing date -
Sep 29, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An integrated circuit (IC) (20) is formed on a semiconductor substrate (21). The IC has a PN junction (28) and a graded junction termination (27). A reverse field plate (31) is mounted adjacent the junction termination. One end of the field plate is mounted on and electrically connected to the substrate; the remainder of the field plate extends over a passivating oxide layer (30) which covers the substrate surface (29) adjacent the junction termination. The field plate provides a common potential surface which maintains a fixed potential on the substrate surface at the junction termination.
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