Removal method of organic matter and system for the same
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United States of America Patent
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May 5, 1998
Grant Date -
N/A
app pub date -
Aug 25, 1995
filing date -
Sep 1, 1994
priority date (Note) -
Expired
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Abstract
According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.
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