Process for passivating treatment of piping system for high-purity gas
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United States of America Patent
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May 5, 1998
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N/A
app pub date -
Mar 8, 1996
filing date -
Jan 17, 1996
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Abstract
A high-concentration ozone gas having a concentration of at least 50 VOL % of ozone in the ozone-oxygen system is acted within the temperature range of a normal temperature to 60.degree. C. on an ultrapurity-gas piping system for use in a semiconductor manufacturing apparatus and the like or on a metal component part for use in an ultrahigh-vacuum apparatus to form a passivation film on the interior metal surface thereof.
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