Manufacturing method or an exposing method for a semiconductor device or a semiconductor integrated circuit device and a mask used therefor
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United States of America Patent
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Apr 7, 1998
Grant Date -
N/A
app pub date -
Aug 8, 1996
filing date -
Jul 11, 1991
priority date (Note) -
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Abstract
One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.
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